APTM100H45FT3G APTM100H45FT3G C rev 2 october, 2012 www.microsemi.com 1 C 7 11 q4 14 13 23 q2 10 8 7 3 4 22 29 31 r1 15 16 32 26 19 18 q1 q3 27 30 1615 18 20 23 22 13 11 12 14 87 2930 28 27 26 3 32 31 10 19 2 25 4 all multiple inputs and outputs must be shorted together example: 13/14 ; 29/30 ; 22/23 absolute maximum ratings these devices are sensitiv e to electrostatic discharge. proper handling procedures should be followe d. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source breakdown voltage 1000 v t c = 25c 18 i d continuous drain current t c = 80c 14 i dm pulsed drain current 72 a v gs gate - source voltage 30 v r dson drain - source on resistance 540 m ? p d maximum power dissipation t c = 25c 357 w i ar avalanche current (repetitive and non repetitive) 18 a e ar repetitive avalanche energy 50 e as single pulse avalanche energy 2500 mj v dss = 1000v r dson = 450m ? typ @ tj = 25c i d = 18a @ tc = 25c application ? welding converters ? switched mode power supplies ? uninterruptible power supplies features ? power mos 7 ? fredfets - low r dson - low input and miller capacitance - low gate charge - fast intrinsic reverse diode - avalanche energy rated - very rugged ? kelvin source for easy drive ? very low stray inductance - symmetrical design ? internal thermistor for temperature monitoring ? high level of integration benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? each leg can be easily paralleled to achieve a phase leg of twice the current capability ? rohs compliant full - bridge mosfet power module downloaded from: http:///
APTM100H45FT3G APTM100H45FT3G C rev 2 october, 2012 www.microsemi.com 2 C 7 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit v gs = 0v,v ds = 1000v t j = 25c 100 i dss zero gate voltage drain current v gs = 0v,v ds = 800v t j = 125c 500 a r ds(on) drain C source on resistance v gs = 10v, i d = 9a 450 540 m ? v gs(th) gate threshold voltage v gs = v ds , i d = 2.5ma 3 5 v i gss gate C source leakage current v gs = 30 v, v ds = 0v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 4350 c oss output capacitance 715 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1mhz 120 pf q g total gate charge 154 q gs gate C source charge 26 q gd gate C drain charge v gs = 10v v bus = 500v i d = 18a 97 nc t d(on) turn-on delay time 10 t r rise time 12 t d(off) turn-off delay time 121 t f fall time inductive switching @ 125c v gs = 15v v bus = 667v i d = 18a r g = 5 ? 35 ns e on turn-on switching energ 639 e off turn-off switching energy inductive switching @ 25c v gs = 15v, v bus = 667v i d = 18a, r g = 5 ? 380 j e on turn-on switching energy 1046 e off turn-off switching energy inductive switching @ 125c v gs = 15v, v bus = 667v i d = 18a, r g = 5 ? 451 j source - drain diode ratings and characteristics symbol characteristic test conditions min typ max unit tc = 25c 18 i s continuous source current (body diode) tc = 80c 14 a v sd diode forward voltage v gs = 0v, i s = - 18a 1.3 v dv/dt peak diode recovery ? 18 v/ns t j = 25c 340 t rr reverse recovery time t j = 125c 640 ns t j = 25c 1.78 q rr reverse recovery charge i s = - 18a v r = 667v di s /dt = 100a/s t j = 125c 4.47 c ? dv/dt numbers reflect the limitations of the circuit rather than the device itself. i s ? - 18a di/dt ? 700a/s v r ? v dss t j ? 150c downloaded from: http:///
APTM100H45FT3G APTM100H45FT3G C rev 2 october, 2012 www.microsemi.com 3 C 7 thermal and package characteristics symbol characteristic min typ max unit r thjc junction to case thermal resistance 0.35 c/w v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2 3 n.m wt package weight 110 g temperature sensor ntc (see application note apt0406 on www.microsemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? b 25/85 t 25 = 298.15 k 3952 k ?? ? ?? ? ? ?? ? ? ?? ? ? ? t t b r r t 1 1 exp 25 85/25 25 sp3 package outline (dimensions in mm) see application note 1901 - mounting instructions for sp3 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTM100H45FT3G APTM100H45FT3G C rev 2 october, 2012 www.microsemi.com 4 C 7 typical performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration 5v 5.5v 6v 6.5v 7v 0 10 20 30 40 50 60 0 5 10 15 20 25 30 v ds , drain to source voltage (v) i d , drain current (a) v gs =15&8v low voltage output characteristics transfert characteristics t j =-55c t j =25c t j =125c t j =125c 0 10 20 30 40 50 60 70 80 012345678910 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cycle r ds(on) vs drain current v gs =10v v gs =20v 0.8 0.9 1 1.1 1.2 1.3 1.4 0 1 02 03 04 05 0 i d , drain current (a) r ds (on) drain to source on resistance normalized to v gs =10v @ 9a 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature downloaded from: http:///
APTM100H45FT3G APTM100H45FT3G C rev 2 october, 2012 www.microsemi.com 5 C 7 0.85 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) bv dss , drain to source breakdown voltage (normalized) breakdown voltage vs temperature on resistance vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) r ds (on), drain to source on resistance (normalized) v gs =10v i d =9a threshold voltage vs temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t c , case temperature (c) v gs (th), threshold voltage (normalized) maximum safe operating area 10ms 1ms 100s 0 1 10 100 1 10 100 1000 v ds , drain to source voltage (v) i d , drain current (a) limited by r ds on single pulse t j =150c t c =25c ciss crss coss 10 100 1000 10000 100000 0 1 02 03 04 05 0 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage v ds =200v v ds =500v v ds =800v 0 2 4 6 8 10 12 14 0 40 80 120 160 200 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage i d =18a t j =25c downloaded from: http:///
APTM100H45FT3G APTM100H45FT3G C rev 2 october, 2012 www.microsemi.com 6 C 7 delay times vs current t d(on) t d(off) 0 20 40 60 80 100 120 140 160 5 10152025303540 i d , drain current (a) t d(on) and t d(off) (ns) v ds =667v r g =5 ? t j =125c l=100h rise and fall times vs current t r t f 0 10 20 30 40 50 60 5 10152025303540 i d , drain current (a) t r and t f (ns) v ds =667v r g =5 ? t j =125c l=100h switching energy vs current e on e off 0 0.5 1 1.5 2 5 10152025303540 i d , drain current (a) switching energy (mj) v ds =667v r g =5 ? t j =125c l=100h e on e off e off 0 0.5 1 1.5 2 2.5 0 5 10 15 20 25 30 gate resistance (ohms) switching energy (mj) switching energy vs gate resistance v ds =667v i d =18a t j =125c l=100h hard switching zcs zvs 0 50 100 150 200 250 300 6 8 10 12 14 16 18 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =667v d=50% r g =5 ? t j =125c t c =75c t j =25c t j =150c 1 10 100 1000 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 v sd , source to drain voltage (v) i dr , reverse drain current (a) source to drain diode forward voltage downloaded from: http:///
APTM100H45FT3G APTM100H45FT3G C rev 2 october, 2012 www.microsemi.com 7 C 7 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the term s of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with life - support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or custo mers final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically discla ims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, dam ages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
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